Similar words: memory management, muscle memory, volatile memory, available memory, addressable memory, identity element, delay element, frame memory.
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1. Non-volatile variohm, memory element, and its scaling method.
2. The present disclosure provides a magnetic memory element.
3. A memory element can also store multiple states, thereby storing multiple bits of digital data.
4. For multi-state memory elements, when each memory element stores two bits of data, where each of these two bits are stored in a different page, one block stores sixteen logical pages.
5. FIG. 6 provides an example structure of memory element array 202.
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6. The memory element is positioned between and in electrical contact with the top electrode and the ring-shaped upper end of the second part of the bottom electrode.
7. The state of the memory element can thereby be detected by a voltage comparator sense amplifier that is connected to the bit line.
8. Moreover, the resistive memory element is connected between the contact plug and the bit line.
9. The memory element includes a magnetic tunnel junction (MTJ) element and an electrode.
10. For example, a multi-state memory element capable of storing data in four states may need to perform verify operations for three compare points.
11. Each memory element can store data represented in analog or digital form.
12. The structure and operation algorithm of IME (intelligent memory element)[sentencedict.com], and the essential unit of this model are discussed in detail.
13. Semiconductor element, memory element, method for operating memory unit and memory element.
14. Such a flash memory device is sometimes referred to as a binary flash memory device because each memory element can store one bit of data.
15. The study results show that these methods are very effective to solve BVP. Especially, the fixed-point method and the continuation method can save computing time and memory element.
16. The specific relationship between the data programmed into the memory element and the threshold voltage ranges of the element depends upon the data encoding scheme adopted for the memory elements.
17. A new kind of strain measuring element, the Max. Strain Memory Element, is introduced in this paper. The element has the function to memorize the value of maximum strain of the loading history.
18. The resistive memory cell comprises a first gate, a second gate, a common doped region, a contact plug, a bit line and a resistive memory element.
19. " In one example of a NAND-type flash memory, the voltage threshold is negative after the memory element is erased, in what may be defined as the logic "1" state.
20. In various designs, one or more of the components of FIG. 5, other than memory element array 202, can be thought of as a managing circuit.
More similar words: memory management, muscle memory, volatile memory, available memory, addressable memory, identity element, delay element, frame memory, elementary education, memory efficiency, save memory, free memory, core memory, cache memory, allocate memory, memory contents, permanent memory, element, memento mori, elements, AND element, subelement, elemental, base element, elementary, memory, code element, element size, data element, image element.